| 摘要 |
PROBLEM TO BE SOLVED: To simplify a semiconductor production process steps by using a resist for silylation in pattern formation of an insulation film and subjecting the resist to a silylation process. SOLUTION: After applying a resist 202 for silylation on a semi-conductor substrate, the resist 202 is pattern wise exposed. Then a silylation processing is performed to form a silylated layer 204 and the silylated layer 204 is hardened with performing an electron beam processing or a UV processing. After that, an etching is performed using the hardened silylated layer 204 as a mask and a wiring step is taken without removing the hardened silylated layer as a stopper for chemical mechanical polishing. With this embodiment, the patterning steps of an insulation film can be simplified. |
