| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a resistance-reduced fluorine-doped tin oxide film by using simple equipment having low airtightness such as a tunnel furnace. SOLUTION: A fluorine-doped tin oxide film formed on a substrate, and containing fluorine in 0.01 to 4 mol% to tin oxide, and having an electrically conductive electron density of 5×10<19> to 4×10<20> cm<-3> is exposed to an atmosphere containing a nonoxidizing gas, >=0.1 vol% water vapor and 100 volppm to 21 vol% oxygen so as to control the substrate temperature to 200 to 500 deg.C. Thus, the resistance-reduced fluorine-doped tin oxide film can be obtained.
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