发明名称 CIRCUIT FOR GENERATING CONSTANT VOLTAGE AND SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A circuit for generating a constant voltage and a semiconductor memory device are provided to maintain the output voltage with high although the power voltage is deteriorated. CONSTITUTION: A circuit(1') for generating a constant voltage includes a first constant current generation circuit, a second constant current generation circuit and a voltage generation circuit(30). The first constant current generation circuit provided with a first and a second transistors(21,22) generates a first voltage and a second voltage determined by depending on the difference between threshold voltages of the first and the second transistors(21,22). The second constant current generation circuit generates a second current proportional to the first current. And, the voltage generation circuit(30) provided with a third transistor(24) connected to the gate and the drain for generates a second voltage when the second current is flows into the third transistor(24).
申请公布号 KR20030023560(A) 申请公布日期 2003.03.19
申请号 KR20020055588 申请日期 2002.09.13
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TAKANO YOSHINORI;TANZAWA TORU
分类号 G11C5/14;(IPC1-7):G11C5/14 主分类号 G11C5/14
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