| 摘要 |
<p>Task: A silicon semiconductor substrate which realises a defect-free region of void type crystals to a greater depth and allows the duration of production to be decreased and a method for the production thereof are provided. Means to fulfil the task: A silicon semiconductor substrate derived from a silicon single crystal grown by the Czochralski method or the magnetic field-applied Czochralski method, which is obtainable by using a silicon semiconductor substrate satisfying the relational expression, 0.2 ≥ V/S/R, providing V denotes the volume of void type defects, S the surface area thereof, and R the radius of spherical defects presumed to have the same volume as the void type defects having the volume of V, and heat-treating this substrate at a temperature exceeding 1150 DEG C.</p> |
