发明名称 EUV-Lithographic projection apparatus comprising an optical element with a capping layer
摘要 <p>A lithographic projection apparatus comprises an optical element such as a multilayered EUV mirror (10,13,14) with protective capping layers (17) of diamond-like carbon (C), boron nitride (BN), boron carbide (B4C), silicon nitride (Si3N4), silicon carbide (SiC), B, Pd, Ru, Rh, Au, MgF2, LiF, C2F4 and TiN and compounds and alloys thereof. The final period (11,12) of a multilayer coating may also be modified (15,16) to provide improved protective characteristics. <IMAGE></p>
申请公布号 EP1065568(A3) 申请公布日期 2003.03.19
申请号 EP20000305432 申请日期 2000.06.28
申请人 ASML NETHERLANDS B.V. 发明人 SINGH, MANDEEP;VISSER, HUGO MATTHIEU
分类号 C03C17/06;C03C17/22;C03C17/34;C03C17/36;G02B1/10;G02B5/08;G02B5/26;G02B5/28;G03F7/20;G21K1/06;H01L21/027;(IPC1-7):G03F7/20 主分类号 C03C17/06
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