| 摘要 |
PURPOSE: Provided is a positive resist composition suitably used for exposure sources of 160 nm or shorter wavelength, which exhibits an improved surface roughness as well as excellent storage stability. CONSTITUTION: The positive resist composition comprises (A) a resin which has a dissolution rate in alkali developer increased by the action of acid, and which comprises a repeating unit(1) represented by the formula I; a repeating unit(2) that is copolymerizable with the repeating unit represented by the formula I and is decomposed by action of acid to increase of dissolution rate of the resin in alkali developer; and a repeating unit(3) that is inactive to the action of acid and doesn't has an alkali-soluble group; and (B) a compound capable of generating an acid upon irradiation with one of an actinic ray and a radiation. In the formula I, R5 represents a hydrogen atom, a halogen atom, a cyano group or an alkyl group which may have a substituent; each of R6 and R7, which may be the same or different, represents a hydrogen atom, a halogen atom, a cyano group, a hydroxyl group or, an alkyl, a cycloalkyl, an alkoxyl, an acyl, an acyloxy, an alkenyl, an aryl or an aralkyl group, each of which may have a substituent; each of R50 to R55, which may be the same or different, represents a hydrogen atom, a fluorine atom or an alkyl group that may have a substituent; at least one of R50 to R55 represents a fluorine atom or an alkyl group in which at least a hydrogen atom is substituted with a fluorine atom.
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