| 摘要 |
PURPOSE: An interconnection and an interconnection connecting portion are provided to improve a barrier characteristic and an RC time delay by forming a double barrier made of a tantalum layer and tantalum nitride. CONSTITUTION: An interconnection and an interconnection connecting portion comprise an insulating layer(21) formed on a semiconductor substrate(20), a hole to expose the defined region of the substrate(20) by removing the lower portion of the insulating layer(21), a trench having an interconnection pattern formed by removing the upper portion of the insulating layer(21) and connected with the hole, a first barrier(240) formed in the hole and trench to contact with the exposed substrate(20), a second barrier(241) formed by a nitration of the first barrier(240), a conductive layer(25) completely filled into the hole and trench to be connected with the second barrier(241).
|
