| 摘要 |
A method for fabricating a MOSFET device using a dual salicide formation procedure has been developed. The process features a first salicide formation procedure used to create a thick metal silicide component for a composite gate structure, with the composite gate structure in turn comprised with the overlying thick metal silicide shape, on an underlying polysilicon shape. The first salicide formation procedure also results in the formation of metal silicide protrusions, extending from the edges of the composite gate structure, overlying adjacent portions of an insulator layer. A novel feature of this invention is the use of the metal silicide protrusions as an etch mask, allowing definition of insulator spacers on the sides of the composite gate structure, to be defined from the underlying insulator layer. A second salicide formation procedure is subsequently employed to form a thin metal silicide layer only on a heavily doped source/drain region.
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