METHOD FOR RECOVERING DAMAGE OF PZT THIN FILM USING LOW TEMPERATURE PROCESS

摘要

PURPOSE: A method for recovering the damage of a PZT(PbZrxTi1-xO3) thin film using a low temperature process is provided to be capable of preventing adjacent thin film material from diffusing into the PZT thin film and reducing total process time by carrying out a heat treatment in the predetermined temperature for a short time. CONSTITUTION: A PZT device is annealed by carrying out a heat treatment in the temperature of 250-350 °C for a predetermined time for recovering damaged electrical characteristics of the PZT device due to an ICP(Inductively Coupled Plasma) etching process. Preferably, the heat treatment is carried out in a furnace at the temperature of 300 °C for 15 minutes. Preferably, the heat treatment is carried out by flowing oxygen of 31/min when the furnace has a diameter of 5 inches.