发明名称 |
Continuous antifuse material in memory structure |
摘要 |
A memory structure has an antifuse material that is unpatterned and sandwiched between each of a plurality of antifuse electrode pairs. The antifuse material is continuous between the antifuse electrode pairs. Furthermore the present invention includes a memory structure comprising a plurality of antifuse electrode pairs forming a plurality of row conductors and a plurality of middle conductors in electrical communication with a plurality of control elements.
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申请公布号 |
US6534841(B1) |
申请公布日期 |
2003.03.18 |
申请号 |
US20010017567 |
申请日期 |
2001.12.14 |
申请人 |
HEWLETT-PACKARD COMPANY |
发明人 |
VAN BROCKLIN ANDREW L.;ELDREDGE KENNETH J.;WANG S. JONATHAN;PERNER FREDERICK A;FRICKE PETER |
分类号 |
H01L21/82;H01L23/525;H01L27/10;H01L27/12;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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