| 摘要 |
A nitride semiconductor epitaxial substrate includes a low-temperature-deposited buffer layer, the composition of which is AlxGa1-xN, where 0<=x<=1, and a single crystalline layer, the composition of which is AlyGa1-yN, where 0>y<=1. The single crystalline layer is deposited directly over the low-temperature-deposited buffer layer, wherein the buffer layer has a mole fraction x satisfying (y-0.3)<=x>y.
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