发明名称 |
Semiconductor device, semiconductor element and method for producing same |
摘要 |
A semiconductor device comprises: a semiconductor substrate; a plurality of first diffusion layers having a low impurity density, the first diffusion layers being formed on the surface of the semiconductor substrate; a plurality of second diffusion layers having a high impurity density, the second diffusion layers being formed on the surface of the semiconductor substrate; a plurality of first contacts, each of which contacts the first diffusion layers and each of which is formed of a semiconductor; and a plurality of second contacts, each of which contacts the second diffusion layers and each of which is formed of a metal.
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申请公布号 |
US6534867(B1) |
申请公布日期 |
2003.03.18 |
申请号 |
US20000670990 |
申请日期 |
2000.09.26 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KAMIYA EIJI;YAEGASHI TOSHITAKE;SHIMIZU KAZUHIRO;SHIROTA RIICHIRO;TAKEUCHI YUJI;ARAI NORIHISA |
分类号 |
H01L21/60;H01L21/768;H01L21/77;H01L21/8234;H01L21/8247;H01L21/84;H01L27/105;H01L27/115;H01L27/12;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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