| 摘要 |
A method of fabricating a vertical TDMOS power device using sidewall spacers and a self-align technique and a TDMOS power device of the same. The TDMOS is fabricated using only 3 masks and a source is formed using the self-align technique to embody a highly integrated trench formation. During the process, ion implantation of high concentration into the bottom of the trench makes a thick oxide film grow on the bottom and the corner of the gate, so that electrical characteristic, specifically leakage current and breakdown voltage of the device can be improved. Also, process steps can be much decreased to lower process cost, high integration is possible, and reliability of the device can be improved.
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