| 摘要 |
A semiconductor memory device includes an interlayer insulating film, a contact film, a crystallization preventing film and a conductive film. The interlayer insulating film is formed on a semiconductor substrate to cover a source/drain region of a MOS transistor. The source/drain region is formed in the semiconductor substrate. The contact film with a first impurity ion concentration contacts the source/drain region. The contact film is formed to partially embed a contact hole along side wall of the contact hole formed to pass through the interlayer insulating film to the source/drain region. The crystallization preventing film with a second impurity ion concentration is formed on the contact film to completely embed the contact hole. The first impurity ion concentration is higher than the second impurity ion concentration. The conductive film with a third impurity ion concentration is formed on a surface of the crystallization preventing film above the interlayer insulating film to have an uneven portion.
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