FLAT PANEL IMAGING SYSTEM

摘要

A novel thin film transistor (TFT) structure for minimizing parasitic capacitances on both the drain and source electrodes. According to a first embodiment, a triple gate TFT is provided with an open gate structure in whi ch the source and drain electrodes are non overlapping with the top gate electrode. A pair of bottom gate electrodes being aligned respectively with the first gap between the gate and source and the second gap between the gat e and drain. According to a second embodiment of the invention, a full transfe r TFT switch is provided having a source, a drain, a bottom gate and semi- conductor layer therebetween, and a partial top gate overlapping a portion o f the drain and a portion of the semiconductor layer for creating a generally triangular-shaped charge density distribution in the semiconductor layer for moving channel electrons toward the source electrode.