Integrated circuit device including a deep well region and associated methods

摘要

An integrated circuit device includes a semiconductor layer of a first conductivity type, a plurality of spaced apart semiconductor pillars extending outwardly from said semiconductor layer and defining trenches therebetween, a respective gate structure in each trench, and at least one deep well region having the second conductivity type and being positioned to extend in the semiconductor layer between an adjacent pair of corresponding semiconductor pillars and beneath a bottom of at least one trench defining therein at least one inactive gate structure. The at least one deep well region may be positioned so that at least one trench does not include a deep well region therebeneath to define at least one active gate structure. Each semiconductor pillar may be of a second conductivity type opposite the first conductivity type.