发明名称 |
Nonvolatile semiconductor memory device with initialization circuit and control method thereof |
摘要 |
A memory cell is connected to a cell-based bit line. The cell-based bit line is connected to a bit line via a Y decoder. The bit line is connected to a sense bit line via a separation circuit. This sense bit line is connected to a sense line via a bias circuit. An amplifier circuit amplifies a signal voltage on the sense line together with a reference voltage for sensing data. The sense line is connected with a sense line initialization circuit for setting the sense line to a specified voltage. The bit line is connected with a bit line initialization circuit for setting the bit line to a specified voltage. Both the sense line initialization circuit and the bit line initialization circuit are activated in a given period before the amplifier circuit operates to sense data. Thus, the sense line and the bit line are set to specified voltages.
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申请公布号 |
US6535427(B1) |
申请公布日期 |
2003.03.18 |
申请号 |
US20000707983 |
申请日期 |
2000.11.08 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TAKANO YOSHINORI;TANZAWA TORU;TAURA TADAYUKI |
分类号 |
G11C16/06;G11C7/12;G11C7/20;G11C16/24;G11C16/26;(IPC1-7):G11C16/26 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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