发明名称 Thin film formation process by clearing the implanted layer with laser radiation
摘要 A process for thin film formation is provided which comprises a step of separation of a substrate constituted of a nonporous Si layer, a porous Si layer formed thereon, and a less porous Si layer formed further thereon into the nonporous Si layer and the less porous Si layer at the porous Si layer, wherein the separation is caused by projecting a laser beam through the side face of the substrate. From the separated substrate, an SOI substrate is prepared, and the non porous Si layer is recycled to the SOI substrate production process. This SOI substrate production process saves the consumption of the material and lowers the production cost. The substrates are separated definitely. A process for producing a photoelectric transducing apparatus such as solar cells with material saving and low cost is also provided in which the porous layer is separated definitely without strong adhesion between the substrate and a jig.
申请公布号 US6534383(B1) 申请公布日期 2003.03.18
申请号 US20000635246 申请日期 2000.08.09
申请人 CANON KABUSHIKI KAISHA 发明人 IWANE MASAAKI;YONEHARA TAKAO
分类号 H01L21/20;(IPC1-7):H01L21/30;H01L21/46 主分类号 H01L21/20
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