发明名称 Methodology for in-situ doping of aluminum coatings
摘要 A chemical vapor deposition process for the in-situ preparation of conformal copper-doped aluminum coatings on a substrate comprises the steps of generating a first flow of a first reactant vapor directed to the substrate in the reactor, the first reactant vapor including a copper source precursor; heating the substrate to a temperature sufficient to decompose the first reactant vapor and form an ultrathin copper seed layer; generating a second flow of a second reactant vapor directed to the substrate in the reactor, the second reactant vapor including an aluminum source precursor; and heating the substrate to a temperature higher than 185° C. to decompose the second reactant vapor and form a copper-doped aluminum film.
申请公布号 US6534133(B1) 申请公布日期 2003.03.18
申请号 US20000607900 申请日期 2000.06.30
申请人 RESEARCH FOUNDATION OF STATE UNIVERSITY OF NEW YORK 发明人 KALOYEROS ALAIN E.;KNORR ANDRES;FALTERMEIER JONATHAN
分类号 C23C16/02;C23C16/18;C23C16/44;C23C16/509;H01L21/3205;H01L21/768;(IPC1-7):C23C16/20 主分类号 C23C16/02
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