发明名称 |
Methodology for in-situ doping of aluminum coatings |
摘要 |
A chemical vapor deposition process for the in-situ preparation of conformal copper-doped aluminum coatings on a substrate comprises the steps of generating a first flow of a first reactant vapor directed to the substrate in the reactor, the first reactant vapor including a copper source precursor; heating the substrate to a temperature sufficient to decompose the first reactant vapor and form an ultrathin copper seed layer; generating a second flow of a second reactant vapor directed to the substrate in the reactor, the second reactant vapor including an aluminum source precursor; and heating the substrate to a temperature higher than 185° C. to decompose the second reactant vapor and form a copper-doped aluminum film.
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申请公布号 |
US6534133(B1) |
申请公布日期 |
2003.03.18 |
申请号 |
US20000607900 |
申请日期 |
2000.06.30 |
申请人 |
RESEARCH FOUNDATION OF STATE UNIVERSITY OF NEW YORK |
发明人 |
KALOYEROS ALAIN E.;KNORR ANDRES;FALTERMEIER JONATHAN |
分类号 |
C23C16/02;C23C16/18;C23C16/44;C23C16/509;H01L21/3205;H01L21/768;(IPC1-7):C23C16/20 |
主分类号 |
C23C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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