发明名称 System for generating a reference voltage
摘要 A system for generating a reference voltage is provided that includes a first p-type, thick-gate transistor, a second p-type, thick-gate transistor, a third p-type, thick-gate transistor, and a fourth p-type, thick-gate transistor. The first p-type transistor has a source that is coupled to an external power supply, a gate, and a drain that is coupled to the gate. The second p-type transistor has a source that is coupled to the drain of the first p-type transistor, a gate, and a drain that is coupled to the gate. The third p-type transistor has a source that is coupled to the drain of the second p-type transistor, a gate that is operable to receive a mode indicator, and a drain that is coupled to ground. The fourth p-type transistor has a source that is coupled to the drain of the second p-type transistor, a gate that is operable to receive an inverted mode indicator, and a drain that is coupled to ground.
申请公布号 US6534806(B1) 申请公布日期 2003.03.18
申请号 US20010005295 申请日期 2001.12.04
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 WERT JOSEPH D.
分类号 G11C5/14;(IPC1-7):H01L29/76 主分类号 G11C5/14
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