METHOD FOR ROUGHENING SURFACE OF SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A method for roughening the surface of a semiconductor substrate is provided to facilitate high capacitance by roughening the surface of the substrate so that the surface area of a storage capacitor is broadened to embody the storage capacitor with minimum capacitance. CONSTITUTION: The semiconductor substrate(5) having a surface(10) is arranged in a furnace. Oxygen and inert gas like argon or nitrogen are introduced into the furnace, maintaining the oxygen concentration in the furnace below 10 percent. The substrate is annealed at a temperature above 950 deg.C and mesopores(15) are formed in the surface of the semiconductor substrate.