| 摘要 |
PURPOSE: To increase the operating speed of a MOS transistor. CONSTITUTION: A semiconductor device is provided which comprises a source region formed of a semiconductor, a drain region formed of a semiconductor having the same conductivity type as that of the source region, a channel region (202) formed of a semiconductor between the source region and the drain region, a gate insulation film (201) formed on the channel region, and a gate electrode which is formed on the gate insulation film and has a PN junction which is formed by a P-type semiconductor region (104b) and N-type semiconductor regions (104a, 302). The P-type semiconductor region and the N-type semiconductor regions of the PN junction (106) of the gate electrode are electrically insulated from each other.
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