NON-VOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: To prevent bird's beaks from being generated in the tunnel insulation film of a non-volatile semiconductor memory, and to obtain improved film quality and a predetermined film thickness of its capacitor insulation film. CONSTITUTION: In an internal combustion pyrognetic oxidation (ISSG) method, an oxygen having an added hydrogen of about 0.5-33% is introduced directly into a chamber of about 900-1100°C and about 1000-2000 Pa, by using a rapid thermal oxidation apparatus to generate moisture on a heated semiconductor substrate 1 with the introduced oxygen and hydrogen. As a result, the top and side surfaces of a floating gate electrode 14B are oxidized, thereby forming a second insulation film 15 is made of silicon oxide on the surface of the floating gate electrode 14B.