| 摘要 |
PURPOSE: A method for fabricating an exposure mask for semiconductor manufacture is provided to prevent a decrease of precision of a critical dimension of a mask pattern contributing to accumulation of electrical charges by additionally forming a mask layer pattern having the same shape as a desired circuit pattern on a photoresist layer and by performing an exposure process using the mask layer pattern regarding the photoresist layer. CONSTITUTION: A chrome layer(2) and a photoresist layer(3) are sequentially formed on a light transmitting quartz substrate(1). A predetermined conductive layer is formed on the photoresist layer. The conductive layer is exposed and developed to form a conductive layer pattern. The conductive layer pattern is oxidized to form an oxide layer functioning as a mask layer on the conductive layer pattern. An exposure process is performed on the photoresist layer by using the conductive layer pattern having the oxide layer and the exposed photoresist layer is developed to form a photoresist layer pattern exposing the chrome layer. The exposed chrome layer is selectively etched to form a mask pattern composed of the chrome pattern. The conductive layer pattern including the oxide layer and the photoresist layer pattern are eliminated. |
