NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE HAVING IMPROVED PROGRAM PREVENTING CHARACTERISTIC AND PROGRAM METHOD THEREOF

摘要

PURPOSE: A non-volatile semiconductor memory device having an improved program preventing characteristic and a program method thereof are provided to have an improved programmable preventing characteristic. CONSTITUTION: The first select transistor(TS10) has a control electrode connected to the first select line(SSL) and a current path one end of which is connected to a bit line(BL1). A word line(WL1) is arranged adjacent to the first select line and in parallel to the first select line. A non-volatile memory cell transistor(T1) has a control electrode connected to the word line and a current path one end of which is connected to the other end of the current path of the first select transistor. The second select transistor(TG10) has a control electrode connected to the second select line(GSL) and a current path one end of which is connected to the other end of the current path of the non-volatile memory cell transistor and the other end of which is connected to a ground voltage. A high voltage pump circuit(200) generates a higher voltage than a power supply voltage during a program operation of the non-volatile memory cell transistor. A select line driver(300) supplies the first select line with a select voltage limited so as to become lower than the power supply voltage during a time when the high voltage is supplied to the word line. A word line decoder(600) receives the high voltage and the select voltage and supplies a program voltage to the word line. A slope control circuit(400) controls a rising slope of the program voltage. The slope control circuit makes the program voltage be increased during a time sufficient to prevent capacitive coupling between the first select line and the word line.