METHOD OF PREVENTING BENDING OF SOI LAYER AND SEMICONDUCTOR DEVICE FORMED BY THE SAME

摘要

PURPOSE: A method of preventing bending of an SOI layer is provided to prevent oxygen from being diffused through an interface between the SOI layer and a buried silicon oxide layer by forming a nitrogen-containing layer on at least a part of the interface or by stacking amorphous silicon on an isolation trench and changing the amorphous silicon through a solid phase epitaxial growth method. CONSTITUTION: An SOI substrate is prepared which includes a lower silicon layer(110), the buried silicon oxide layer(111), the SOI layer and the nitrogen-containing layer between the buried silicon oxide layer and the SOI layer. The SOI layer of the SOI substrate is etched to form the isolation trench.