发明名称 OPTOELEKTRONISCHES SENSOR-BAUELEMENT
摘要 <p>The invention relates to an opto-electronic sensor component comprising the following: a first semiconducting layer of predetermined conductivity type and a second layer of different semiconductor or metal conductivity type; a transition region between the two layers; at least one surface region through which the electromagnetic radiation to be detected can pass into the transition region (radiation-side surface region); and an electrode for each layer to connect both layers to an electrical circuit. The electrodes of the two layers are mounted on a surface of the component opposite a radiation-side surface region. This simplifies connection of the sensor component to an electrical circuit mounted on a circuit board or the like.</p>
申请公布号 AT233434(T) 申请公布日期 2003.03.15
申请号 AT19960946111T 申请日期 1996.12.20
申请人 DR. JOHANNES HEIDENHAIN GMBH;SILICON SENSOR GMBH 发明人 HOFBAUER, HERMANN;KRIEGEL, BERND;SPECKBACHER, PETER;ULLRICH, MARTIN;DIETL, RUPERT
分类号 H01L31/10;H01L31/0224;(IPC1-7):H01L31/02 主分类号 H01L31/10
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