SEMICONDUCTOR DEVICE, CAPACITIVE ELEMENT AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To solve a problem that reduction of leak current cannot be obtained even if platinum of large work function is adopted for an electrode material, since a microscopically sharp part occurs at the end face of a lower platinum electrode when a recessed electrode represented by a cone cave capacitor is formed. SOLUTION: The microscopically sharp part caused in the end face of the lower platinum electrode (Pt film 7) is rounded by annealing. Thus, a high performance capacitor with reduced leak current can be formed.