| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a proper resist pattern by EB (electron beam) direct lithography and proper circuit pattern thereafter in a manufacturing process of semiconductor devices, etc., using the EB (electron beam) direct lithography, which coats the entire substrate uniformly with an EB (electron beam) direct lithography resist even in the presence of electrodes having a gold layer and wirings on the substrate. SOLUTION: The method comprises steps for forming patterns 13 of electrodes (wiring) each having an Au layer 9 and an uppermost thin film layer 11 of Ni which is metal easy to oxidate on a silicon substrate 1, coating the entire substrate surface with an EB (electron beam) direct lithography resist 17, including the surface of the electrode (wiring) pattern, drying it, selectively exposing the resist by the EB direct lithography, developing it to form a resist pattern 17a having specified openings, and depositing a metal film 21 to corresponding spots on the substrate surface to the openings of the resist pattern, thereby forming a circuit pattern 21a. |
