| 摘要 |
PROBLEM TO BE SOLVED: To provide a p-type semiconductor which provides low-contact resistance for electrode and assures superior transmission efficiency. SOLUTION: A p-GaN layer 5 as III-nitride-system compound or the like is formed on a sapphire substrate 1 with the MOVPE method, and a first metal layer 6 composed of Co/Au is formed on the layer 5. Thereafter, the first metal layer 6 is irradiated with electron beam with a surface electron irradiation apparatus, utilizing plasma. Accordingly, a damage layer is prevented from being formed on the surface layer, and the resistivity of the p-GaN layer 5 can be lowered. Next, a second metal layer 10 (Ni) is formed on the first metal layer 6. Thereafter, the first metal layer 6 is etched with nitric fluoric acid via the second metal layer 6. Accordingly, the first metal layer is removed almost completely. Thereafter, a light transmitting p-electrode 7 composed of Co/Au is formed thereon. Thereby, a p-type semiconductor having lower contact resistance and low-drive voltage can be formed, and the light transmission efficiency thereof can also be improved. |
