| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory in which while data rewriting can be electrically performed, memory size can be reduced, and manufacturing cost can be reduced. SOLUTION: The nonvolatile semiconductor memory is provided with a plurality of cell transistors CT11, CT12,..., a plurality of transistors for selection ST1, ST2,..., row lines, column lines, a first decoder 37 and a second decoder 39. The transistor for selection selects (n) pieces (n>=2) of the same column out of the plurality of cell transistors. Control gate lines of cell transistors of the same row out of a plurality of cell transistors are connected respectively to the row lines. The transistors for selection are connected to the column lines. The first decoder supplies decode-signals W11, W12,... to each control gate of cell transistors of the same row via the row lines. The second decoder supplies decode-signals X1, X2,... to the transistors for selection, and selectively controls conduction.</p> |
