发明名称 HIGH FREQUENCY POWER AMPLIFIER
摘要 PROBLEM TO BE SOLVED: To provide a module structure of a high frequency power amplifier capable of downsizing a size without impairing design accuracy of a resonant trap circuit of an output matching circuit. SOLUTION: An input terminal and an output terminal are provided on a first dielectric substrate, and chip parts such as high frequency transistors, capacitors, or inductors and a second dielectric substrate are equipped on the first dielectric substrate. A resonant trap circuit constituted by via holes and capacitors as a part of an output matching circuit is provided on the first dielectric substrate, and a transmission line as a part of the output matching circuit, more specifically, the transmission line composed of a strip line is provided on the second dielectric substrate.
申请公布号 JP2003078368(A) 申请公布日期 2003.03.14
申请号 JP20010268191 申请日期 2001.09.05
申请人 HITACHI LTD 发明人 KAGAYA OSAMU;SEKINE KENJI;KURIYAMA SATORU
分类号 H03F3/60;(IPC1-7):H03F3/60 主分类号 H03F3/60
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