发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor laser device by setting the oxygen contents of the surface part of a semiconductor to serve as a resonator face. SOLUTION: A layered product constituted of a plurality of semiconductor layers such as a lower clad layer 2, lower light waveguide layer 3, lower barrier layer 4, quantum well active layer 5, upper barrier layer 6, upper light waveguide layer 7, and upper first clad layer 8 is formed on a substrate 1. Dielectric layers 16 including reflectivity control layers 19 are formed on two edge faces 22 of the layered product so that a resonator face can be constituted of the edge faces 22 in this semiconductor laser device. On at least one of the two edge faces 22, the oxygen contents of the semiconductor surface brought into contact with the dielectric layer 16 are set to be ranging from 10 to 1500 times of the oxygen contents included in the semiconductor at any part other than the surface.
申请公布号 JP2003078199(A) 申请公布日期 2003.03.14
申请号 JP20010265356 申请日期 2001.09.03
申请人 FUJI PHOTO FILM CO LTD 发明人 YAMANAKA HIDEO
分类号 H01S5/028;(IPC1-7):H01S5/028 主分类号 H01S5/028
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