| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of performing minute element separation processing. SOLUTION: At first, a resist film by a line/space pattern of a vertical direction for layout of element separation is formed on an insulating film 1 to perform first etching. Next, a resist film by a line/space pattern of a horizontal direction is formed to perform second etching. A semiconductor layer is grown by selective epitaxial growth on a surface of a substrate 10 appearing on only an opening part T of a part in which an opening part T1 due to the first etching and an opening part T2 due to the second etching intersect, and finally a semiconductor device surface is flattened.
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