发明名称 HEAT TREATMENT APPARATUS AND METHOD
摘要 PROBLEM TO BE SOLVED: To effectively heat a substrate within a heat treatment apparatus to perform the process accompanied by heating of substrate. SOLUTION: The heat treatment apparatus 1 performs the process accompanied by heating of a substrate 9 through irradiation of light to the substrate 9 within a chamber formed of a body 12 and a window member 13. In this apparatus 1, a plurality of light source units 2 which allocate semiconductor lasers to attain high output power are provided. At the window member 13, a reflecting film is formed in a region except at the region for transmitting the laser beam. Accordingly, effective heating can be executed using a high- power laser output. Moreover, the reflected light from the substrate 9 can be returned to the substrate 9 through reflection by the reflecting film.
申请公布号 JP2003077852(A) 申请公布日期 2003.03.14
申请号 JP20010265374 申请日期 2001.09.03
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 FUNAYOSHI TOSHIMITSU
分类号 C23C16/46;H01L21/205;H01L21/22;H01L21/26;(IPC1-7):H01L21/26 主分类号 C23C16/46
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