| 摘要 |
PROBLEM TO BE SOLVED: To prevent the occurrence of a side branch when a hole is formed by electro-chemical reaction. SOLUTION: A diffusion layer 30 is formed in a range wider than the area 11 of electro-chemical reaction. A scar 12 deeper than the depth of the layer is made in the area of the diffusion layer 30. A current is made to flow only in the part of the scar penetrating the diffusion layer 30, and a semiconductor substrate 10 is worked.
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