发明名称 METHOD FOR MANUFACTURING SILICON WAFER AND SILICON WAFER
摘要 PROBLEM TO BE SOLVED: To form BMDs inside a silicon wafer in a shorter time and by a lower temperature heat treatment than conventional. SOLUTION: This method for manufacturing the silicon wafer, where the silicon wafer is heat-treated in a gas atmosphere to form vacancies inside, is characterized in that the silicon wafer W, to which nitrogen is previously added, is subjected to the heat treatment.
申请公布号 JP2003077925(A) 申请公布日期 2003.03.14
申请号 JP20010265058 申请日期 2001.08.31
申请人 SUMITOMO MITSUBISHI SILICON CORP 发明人 NAKADA YOSHINOBU;ITO WATARU
分类号 H01L21/322;(IPC1-7):H01L21/322 主分类号 H01L21/322
代理机构 代理人
主权项
地址