发明名称 |
METHOD FOR MANUFACTURING SILICON WAFER AND SILICON WAFER |
摘要 |
PROBLEM TO BE SOLVED: To form BMDs inside a silicon wafer in a shorter time and by a lower temperature heat treatment than conventional. SOLUTION: This method for manufacturing the silicon wafer, where the silicon wafer is heat-treated in a gas atmosphere to form vacancies inside, is characterized in that the silicon wafer W, to which nitrogen is previously added, is subjected to the heat treatment.
|
申请公布号 |
JP2003077925(A) |
申请公布日期 |
2003.03.14 |
申请号 |
JP20010265058 |
申请日期 |
2001.08.31 |
申请人 |
SUMITOMO MITSUBISHI SILICON CORP |
发明人 |
NAKADA YOSHINOBU;ITO WATARU |
分类号 |
H01L21/322;(IPC1-7):H01L21/322 |
主分类号 |
H01L21/322 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|