SEMICONDUCTOR LASER DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor laser device which is capable of reducing its proportion defective in a vertical lateral mode. SOLUTION: This semiconductor laser device is equipped with a p-type second clad layer 6 which contains a ridge and is formed on an active layer 4, a light trapping layer 8 which is formed so as to cover the side of the ridge, and a p-type first cap layer 10 which is formed on the top surface of the ridge and contains material having a smaller refractive index than the p-type second clad layer 6 containing the ridge.