| 摘要 |
PROBLEM TO BE SOLVED: To provide a chip capacitor in which an inductance (L) of a coil 4 and the resistance (R) of a resistor 5 between an inner layer electrode and an outer electrode in the equivalent circuit of the chip capacitor shown in the figure 3 are extremely close to zero and which has superior high frequency characteristics, and to provide a method of manufacturing the chip capacitor. SOLUTION: A facing electrode and an integrated electrode having an outer connection terminal function are connected with both surfaces of a dielectric layer, and at least the bottom surface of the dielectric layer has a thickness thick enough to be mounted on a board and to support itself. An electrode layer is connected with the dielectric layer by sintering using a spark plasma sintering (SPS) method and divided into unit chips. Or, a dielectric layer is formed on the integrated electrode layer surface beforehand, or the dielectric layer is connected with the surface of the integrated electrode layer via an adhesive layer. Or, after the green sheets of the dielectric layers and the integrated electrode layers are layered, passed and sintered, the layered sheet are divided into unit chips to obtain the chip capacitor.
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