BURIED SEMICONDUCTOR OPTICAL DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a buried semiconductor optical device having a structure where Zn is restrained from being diffused into an active layer and a Fe-doped InP buried layer. SOLUTION: A laminate which is composed of at least a first conductivity- type clad layer 2, an active region formed of an active layer or a light absorbing layer 4, and a second conductivity-type clad layer 6, is processed into a mesa stripe on a semiconductor substrate 1. Each side of the laminate is filled up with An Fe-doped InP layer 10 for the formation of a buried semiconductor optical device, and the buried semiconductor optical device is characterized by it that a layer 9 loaded with ruthenium is provided between the Fe-doped InP layer 10 and the laminate.