| 摘要 |
PROBLEM TO BE SOLVED: To always provide semiconductor devices having the same characteristics by keeping uniform the film quality of a polycrystalline semiconductor film, at formation of a semiconductor device which includes the polycrystalline semiconductor film. SOLUTION: After an impurity is diffused to a polycrystalline semiconductor film formed on a substrate, the film is then subjected to heat treatment under the conditions that the impurity diffused be not activated completely. The thickness of polysilicon film and sheet resistance after diffusion of impurity are measured respectively, and the semiconductor film forming conditions are adjusted so as to always provide fixed values for the product of these values.
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