发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To stably perform a processing as being set to a substrate to be processed even when reproducibility of the processing of a semiconductor device manufacturing device is instable. SOLUTION: A manufacturing method for a semiconductor device comprises a step S101 of deciding a film formation recipe for applying a prescribed processing to the substrate to be processed inside a reaction chamber of the semiconductor device manufacturing device, a step S102 of performing the processing to the substrate to be processed on the basis of the decided film formation recipe, a step S103 of measuring one or more process parameters fluctuating throughput of the processing to the substrate to be processed during the processing, steps S104 and S105 of obtaining a new film formation recipe in which a processing amount becomes a set value during the processing from a reference state indicating relation of the throughput corresponding to a processing condition and the process parameter and a measured value of the process parameter measured during the processing, and a step S105 of performing the processing on the basis of the new film formation recipe during the processing.
申请公布号 JP2003077782(A) 申请公布日期 2003.03.14
申请号 JP20010264868 申请日期 2001.08.31
申请人 TOSHIBA CORP 发明人 NAKAO TAKASHI
分类号 C23C16/52;H01L21/00;H01L21/02;H01L21/205;H01L21/302;H01L21/3065;H01L21/31;(IPC1-7):H01L21/02;H01L21/306 主分类号 C23C16/52
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