| 摘要 |
PROBLEM TO BE SOLVED: To form a (nondefective) III-V compound semiconductor layer without dislocations, and further a silicon layer on a silicon single-crystal substrate. SOLUTION: The semiconductor device has a silicon single-crystal substrate 1, a GaP buffer layer 2 that is formed on the silicon-single crystal substrate 1 to the thickness of a critical film, and a plurality of semiconductor layers 3 each comprising a III-V compound semiconductor layer where formation is made on the GaP buffer layer 2 and nitrogen is added so that substantial lattice matching is made to a silicon signal crystal. Additionally, a silicon surface layer is provided on each of the plurality of semiconductor layers 3. |
