| 摘要 |
PROBLEM TO BE SOLVED: To provide an ohmic electrode which is formed by depositing a high melting-point metal and a nitride hereof and a silicide thereof on an InXGa1- XAs (0<X<=1) layer to have sufficient resistance for practical use through suppression of deterioration of contact resistance, and also provide a method of manufacturing the same ohmic electrode. SOLUTION: The ohmic electrode which is formed by laminating a metal layer 11b of single layer or more on a barrier layer 10 in stress of 7.0×108 Pa or lower, which is formed by a sputtering method, under gas pressure of 0.4 Pa to 1.6 Pa on a cap layer 9 of InXGa1- XAs (0<X<=1) formed on a compound semiconductor using a high melting-point metal, a nitride thereof or a silicide thereof is used to form a heterojunction bipolar transistor (HBT).
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