| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of estimating the shape of a resist pattern formed by exposure using a charged particle beam exposure device which exactly simulates the resist pattern and does not take a so long time for calculation thereof. SOLUTION: The dose distribution of charged particle beams arriving on a wafer is approximated with a linear combination of two or more Gaussian functions, and the energy distribution in the wafer due to charged particles incident on one point of the wafer is expressed with a single Gaussian function of a linear combination of two or more Gaussian functions, to calculate the energy accumulation quantity. A developed resist pattern is estimated, based on the energy accumulated quantity. |
