| 摘要 |
PROBLEM TO BE SOLVED: To provide an accurate method and device for analyzing the light gain and light absorption of a semiconductor light element. SOLUTION: The cross-sectional structure of an element is inputted (s1), and deviation distribution in an active layer is calculated by using a finite element method based on the cross-sectional structure of the element (s2). A band structure in the active layer is calculated based on the deviation distribution (s3), and gain coefficient distribution in the active layer is calculated based on the band structure (s4). On the other hand, electromagnetic field distribution in the active layer is calculated by using a finite difference method based on the cross-sectional structure of the element (s5). At last, a valid gain coefficient is calculated based on the gain distribution and electromagnetic field distribution (s6), and the result is outputted (s7).
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