| 摘要 |
PROBLEM TO BE SOLVED: To obtain a charge injection spin transistor which induces a charge alignment phase transition by other braking except a magnetic field and which uses the transition for a memory device. SOLUTION: The charge injection spin transistor comprises a perovskite Mn oxide layer 12 having a source electrode 13, a drain electrode 14, and further a structure having a gate electrode 16 on the layer 12 via an insulating layer 15 to induce the charge alignment phase transition. In this transistor, a voltage is applied to the gate electrode 16 to control a carrier (hole) density in the layer 12. Thus, the transition is induced by other braking except the magnetic field, and this can be used for the memory device.
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