METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To improve the degree of integration by preventing the diffusion of semiconductor impurities that occurs in a manufacturing process of a vertical NPN transistor. SOLUTION: A first N<+> type embedded diffusion layer 11 is formed by using a first N<+> type impurity on a P type substrate 10, and a second N<+> type embedded diffusion layer 12 is formed so as to protrude from the first N<+> type embedded diffusion layer at both sides of this first N<+> type embedded diffusion layer by using a second N<+> type impurity having a larger diffusion coefficient than that of the first N<+> type impurity. Then a third N<+> type diffusion layer 14 is made to grow by diffusion from the surface side of an N type epitaxial growth layer 13, and is joined to the second N<+> type embedded diffusion layer 12.