| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment method which can fully control diffusion of substances from a substrate and also stably control temperature, when a substrate is subjected to spike annealing. SOLUTION: After a Si wafer W is placed on a substrate support 3 within a heat treatment apparatus 1, the Si wafer W is heated with a lamp from the upper direction to suddenly raise temperature, while He gas is supplied as process gas into a space Sb. When the temperature of Si wafer W reaches, for example 1,000 deg.C, the lamp is tuned off, or the output is lowered. Simultaneously, the O2 gas reduced by the He gas is supplied to a closed space Sa in the rear side of the Si wafer W. The Si wafer W is quickly cooled, and the rear surface is oxidized by O2 gas. Accordingly, SiO existing at the rear surface is converted to form a SiO2 film. Thereby, external diffusion from the rear surface of the Si wafer W, such as sublimation of SiO and generation of phosphorus or the like, can be prevented.
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