发明名称 DRY CLEANING TIME DETERMINING SYSTEM, DRY CLEANING METHOD, AND DRY CLEANING SYSTEM OF SEMICONDUCTOR- MANUFACTURING APPARATUS, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a dry cleaning time determining system that automatically determines cleaning treatment in a semiconductor-manufacturing apparatus. SOLUTION: In dry cleaning, a deposition film deposited inside a reaction both 5 of a semiconductor-manufacturing apparatus is subjected to etching removal by a cleaning gas at least containing a halogen gas. The first invention is a system for automatically determining cleaning time. In the second invention, metal, a metal compound, an organic-based gas, or the like exists when removing a deposit film that is deposited in the reaction tank of the semiconductor- manufacturing apparatus for forming a CVD film or the like by the cleaning gas containing at least halogen gas, such as ClF3 . A selection ratio and the cleaning time are increased. The third invention is a system that carries out control for conducting efficient cleaning in the apparatus.
申请公布号 JP2003077838(A) 申请公布日期 2003.03.14
申请号 JP20010262294 申请日期 2001.08.30
申请人 TOSHIBA CORP 发明人 KATSUI SHUJI;TANAKA MASAYUKI;KAMIMURA MASAKI;AKAHORI HIROSHI;MIZUSHIMA ICHIRO;NAKAO TAKASHI;YAMAMOTO AKITO;SAIDA SHIGEHIKO;TSUNASHIMA YOSHITAKA;MIKATA YUICHI
分类号 C23C16/44;B08B11/00;G05B19/05;H01L21/02;H01L21/205;H01L21/302;H01L21/3065;H01L21/31;H04L12/66;(IPC1-7):H01L21/205;H01L21/306 主分类号 C23C16/44
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